Abstract
Growth rates of ZnSe grown by migration enhanced epitaxy (MEE) with low beam pressures of elements concentrate in the values of about 0.5 monolayer (ML) per MEE cycle. The growth rate steps up to unity under the growth conditions with high beam pressure. In photoluminescence spectra, the samples grown under high growth rates indicate intense deep level emission compared with the samples of low growth rates. The quality of MEE-ZnSe grown under low growth rate is higher than for samples of high growth rate, i.e., the 0.25 ML growth per supply produces high-quality ZnSe epilayers.
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