Abstract
The growth process in the initial stage of growth of Ge films on (811)Si substrate surfaces by GeH4 source molecular-beam epitaxy has been studied by in situ reflection high-energy electron diffraction observation. It has been found that a strained film by the monolayer overgrowth mode is formed initially with an epitaxial relationship of the parallel orientation, and that plate-shaped Ge islands with (811) facets are grown early in the growth, but that the predominant facet changes to {311} and the (100) planes with further growth. These growth processes are similar to those of Ge films on (100)Si surfaces reported previously. It is concluded that Ge islands with {811} facets are energetically stable in the initial stage of the island growth on the (811)Si surfaces as well as on the (100)Si surfaces.
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