Abstract
The growth process of polyhedral oxide precipitates in Czochralski (CZ) silicon crystals has been studied with annealing at 1100°C from 4 h to 16 h, after preannealing at 900°C for 4 h. It was found, from transmission electron microscopy (TEM) observations, that the growth of polyhedral precipitates follows a t1/2 law. At 1100°C, the concentration of oxygen interstitials at the interface (CiO) is estimated to be 1.2 times the thermal equilibrium concentration (CO*) on the basis of a theoretical model of oxygen precipitation in silicon. The growth of polyhedral precipitates is explained quantitatively by a diffusion-limited growth model of a spherical precipitate, using the estimated CiO.
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