Abstract
A new phase of bismuth indium niobate, the Bi 2InNbO 7 compound, was grown by the sub-solidus reaction method. Rietveld refinement of the powder X-ray diffraction data revealed that the Bi 2InNbO 7 compound has the pyrochlore crystal structure, cubic system with space group Fd3m and the lattice parameter is a=10.7793(2) Å. The optical absorption and electrical properties of Bi 2InNbO 7 were investigated. It is found that the Bi 2InNbO 7 compound exhibits a direct gap semiconducting behavior. Conductivity measurement showed that the compound has an activation energy of 2.62(5) eV. UV-vis diffuse reflectance spectroscopy measurement revealed that the band gap of Bi 2InNbO 7 is about 2.7(4) eV.
Published Version
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