Abstract
The morphology of thermally evaporated zinc phthalocynine (ZnPc) organic thin films were engineered for obtaining high performance organic thin film transistor(OTFT) by varying substrate temperature and fixed deposition rate 0.1 Å/sec. ZnPc thin films were characterized by X‐ray diffraction (XRD) and atomic force microscopy. The output characteristic of organic thin film transistor shows the highest mobility in the device with the thin film grown at 90 °C by reducing the effect of grain boundaries.
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