Anistropic growth and high performance organic thin film transistor

Abstract

The central feature in the operation of organic electronic devices is the charge carrier transport which depends upon the molecular structure and the arrangements of molecules on the substrate. The charge transport properties can be improved by maximizing the order of the thin films. Understanding the relationship between film morphology and charge transport is key to enhance the performance of the thin film transistor. We demonstrate that anisotropic film growth achieved by tailoring different growth parameters is a crucial factor in achieving high performance thin film transistor. Here we present detailed characterization of organic thin films employed for fabrication of high performance organic thin film transistor using atomic force microscopy and X-ray diffraction measurements to provide a direct evidence of the effect of anisotropic growth and crystallinity of the film on improved device performance.