Growth, Optical Properties, and Stimulated Emission of Nd-Doped Aluminates with the K2NiF4 Structure

Abstract

The development of highly efficient, high power, nearly monochromatic GaAlAs diode laser arrays, and the growing number of applications of diode-laser pumped solid state lasers based on the properties of the Nd3+ ion, has prompted the interest in the reevaluation of long discovered laser materials as well as the search for new and more adequate materials for this kind of lasers.1 Presently, the material of choice for these lasers is Nd:YAG, but its narrow absorption bands demand wavelength uniformity and temperature control of the diode laser arrays within tolerances that are too narrrow for high yield manufacturing and for efficient system operation. Furthermore, many applications require operation at wavelengths beyond those accessible with Nd:YAG, or they require broader emission bands for tunability or very short pulse generation. Besides having low scattering losses, high quantum efficiency, been easy to grow and having adequate thermal and thermo-optical properties, a good material may also be required to have a high stimulated emission cross section, a long fluorescence lifetime and a high damage threshold.