Growth of ZnSe on GaAs(1 1 0) surfaces by molecular beam epitaxy

Abstract

Single crystal films of ZnSe have been grown on nonpolar GaAs(1 1 0) surfaces by molecular beam epitaxy (MBE). The epitaxial films have been characterized by in situ reflection high-energy electron diffraction (RHEED), ex situ scanning electron microscopy (SEM) and X-ray diffraction. RHEED and SEM images of the surfaces reveal the formation of facets which are aligned along the [0 0 1] direction. The formation of facets indicates that ZnSe growth on the (1 1 0) surface proceeds 6°–13° off the vicinal (1 1 0) surface. Facet-free ZnSe surface has been successfully grown on a GaAs(1 1 0) 6°-off the substrate.