Abstract
ZnSe nanowires were grown on fused quartz substrates by a vapor transport method in which the ZnSe powder is heated at 1100 °C in a tube of the furnace. The scanning electron microscopy images showed that the nanowires have the average diameter of ∼110 nm. The X-ray diffraction measurement indicates that the ZnSe nanowires were a single phase of zinc-blende ZnSe. The photomodulated transmittance (PT) measurements were performed for the ZnSe nanowires at temperatures between 15 and 300 K. The measured PT spectra revealed distinct structures of E0 critical point at ∼2.6−2.8 eV. This E0 critical point structure was successfully explained by adding an excitonic line shape to a one-electron line shape. The temperature dependence of E0 energy was analyzed using an analytical formula that takes into account the band-gap shrinkage effect by the electron-phonon interaction in semiconductors. The exciton binding energy of ZnSe nanowires was determined to be 20 meV.
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