Abstract
Zinc selenide (ZnSe) nanowires were grown on Si and fused quartz substrates by a simple vapor transport method of heating the ZnSe powder at 1100 °C in a tube of the furnace. The obtained yellow colored product has indicated to be the high density of ZnSe nanowires with diameters ranging from 50 to 200 nm. Low-temperature photoluminescence spectra for ZnSe nanowires show near band-edge emissions. The free excitonic emissions were observed at ~2.8 eV.
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