Abstract
Growth of ZnSe films on GaAs by conventional and pulsed modes of MBE has been examined as a function of substrate temperature. For pulsed MBE, we find four different regions in the growth rate versus substrate temperature diagram, while for MBE, the growth rate is proportional to the beam fluxes and increases steadily as temperature decreases. In particular, a self-regulatory process is found to govern layer stacking in the pulsed mode at temperatures between 350 and 400°C.
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