Abstract
This paper reports on the growth of ZnSe and ZnCdSe epilayers on GaAs(2 1 1)B substrates by molecular beam epitaxy. The layer quality, as determined by the PL spectra, depends critically on the reconstruction of the GaAs surface before growth. Two surface reconstructions are suggested for the (2 1 1)B surface which correspond to the two different corrugation heights that are observed by RHEED. For ZnCdSe there is a correlation between the surface reconstruction, growth temperature and epilayer quality, while for ZnSe the correlation is less clear. One of the surface reconstructions is clearly associated with twinning and the break-up of the surface into facets.
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