Abstract
ZnO films were grown on GaAs(0 0 1)substrates at different surface treatment conditions at different growth temperatures by metal-organic chemical vapor deposition. ZnO(1 0 0) and ZnO(0 0 2) films that had different preferred orientations were grown according to different chemical etching condition. The crystallinity and optical properties of ZnO films were investigated with X-ray diffraction and the room-temperature photoluminescence spectra. Compared with ZnO(0 0 2) films, ZnO(1 0 0) films that have undergone variation at the preferred orientation have better crystal structure. Moreover, all samples have similar optical characteristics at the same growth temperature. For GaAs substrates etched under different conditions, the analysis results of X-ray photoelectroscopy show that the preferred orientation variations of ZnO films take place because rich As layer are formed in process of chemical etching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
