Abstract
Zinc Oxide (ZnO) nanowires are grown by hydrothermal method on ZnO seed layers deposited by Atomic Layer Deposition (ALD) at different temperatures ranging from 80 to 250 °C. The ZnO films are formed on SiO2/Si substrates using diethyl zinc (min. 95% Zn) and DI water precursors. We demonstrate that the increase in the deposition temperature, as well as the post-deposition thermal treatment, favours the formation of well-discrete nano-crystalline film that drives the ZnO NW growth in c-axis preferential orientation. The experimental results indicate that the NW characteristics are independent of film thickness layer and their angular orientation to the substrate range from 80 to 90 degrees for post-annealed seed layers.
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