Abstract
ZnO/GaN heterojunction light-emitting diode was grown using zinc acetate as precursors on p-GaN substrate by one-step aqueous method in this paper. Structural and optical properties of heterostructure were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), and photoluminescence (PL). It has been found that ZnO film was formed by using zinc acetate as precursors with one-step aqueous method. Meanwhile, the device based on ZnO/GaN heterostructure displayed diode-like current-voltage (I-V) characteristics. Electroluminescence (EL) characterization results showed an intense broadband emission in the yellow-green spectral region under the forward bias. It indicated that EL emission of ZnO/GaN heterostructure was originated from impurity-involved emission.
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