Abstract
ZnO films have been grown on a-plane sapphire substrates by metalorganic vapor-phase epitaxy using diisopropylzinc as a zinc source and iso-propanol or tertiary-butanol as oxygen sources. The growth temperature and pressure were 300–500 °C and 76 Torr, respectively. The samples were characterized by photoluminescence, Hall-effect measurements, X-ray diffraction and Raman spectroscopy. When tertiary butanol was used as the oxygen source under high VI/II conditions, distinctive peaks were observed at 3.29 eV and 1550 cm −1 in the photoluminescence and Raman spectra, respectively.
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