Growth of Zn2GeO4 and Cu-Doped Zn2GeO4 Nanowires by Thermal Evaporation

Abstract

The effects of oxygen partial pressure and a Cu catalyst on the growth of nanowires (NWs) on Si substrates by thermal evaporation of ZnS and Ge powders at in Ar were studied. The NWs could grow on the bare Si substrates at in Ar, while a deposited Cu layer further enhanced their growth, forming the Cu-doped NWs. The growth of both the and Cu-doped NWs followed the self-catalyzed vapor–liquid–solid process. In , nanoparticles instead of NWs predominantly formed on the Si substrates, revealing that the higher oxygen partial pressure in Ar enhanced the growth of . The green emission peak of Cu-doped NWs showed a blueshift of about 25 nm relative to that of the undoped NWs.