Abstract
Epitaxial ZnO was deposited on Si(1 1 1) substrate by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) at 500 °C. A Y 2O 3 buffer layer in epitaxy with Si substrate has successfully suppressed the Si oxidation before ZnO deposition. The Y 2O 3 film was grown by pulsed laser deposition (PLD) on Si(1 1 1) substrate at 800 °C. Also, ZnO was deposited by PLD for comparison with MOCVD. X-ray diffraction and cross-sectional transmission electron microscopy was used to characterize microstructures of the ZnO films and their interfaces with Y 2O 3. The result shows ZnO(0 0 0 2) parallel to Y 2O 3(1 1 1). With the increase of the deposition time, the grain morphology of ZnO thin films evolved from flat structure to columnar structure. Most of the columnar ZnO grains are c-axis oriented perpendicular to the interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
