Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

Abstract

Zinc-blende GaN films were grown on GaAs (100) substrates by low-pressure metalorganic vapor phase epitaxy using trimethylgallium or triethylgallium and NH3. Films grown at lower temperatures contained considerable amounts of carbon, but the carbon concentration was reduced in high temperature growth. When the film was grown at 950°C using triethylgallium and NH3, its carbon concentration was on the order of 1017 cm−3. The crystalline and optical quality of zinc-blende GaN crystal also improved with high-temperature growth at a low V/III ratio using a thin buffer layer. The films exhibited only one sharp photoluminescence peak at 3.20 eV with a full width at half maximum as low as 70 meV at room temperature.