Abstract
Epitaxial growth of high quality hexagonal GaN films on sapphire substrates using light radiation heating metal-organic chemical vapor deposition (LRH-MOCVD) is reported. The deposition temperature is 950/spl deg/C, about 100/spl deg/C lower than that in normal rf-heating MOCVD growth. The FWHM of the GaN (0002) peak of X-ray diffraction rocking curve is 9.8 arc min. The photoluminescence spectrum of GaN shows that there is a very strong band-edge emission and no yellow-band luminescence. Hall measurement indicates that the n-type background carrier concentration of the GaN film is 1.7/spl times/10/sup 18/ cm/sup -3/ and the Hall mobility is 121.5 cm/sup 2//V.s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages of the parasitic reaction between trimethylgallium and ammonia.
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