Abstract
Well ordered Rh overlayers have been grown on Si tip surfaces in ultrahigh vacuum. The field ion images of the overlayers grown on the Si{012} plane reveal two distinctive atomic structures. One has a diamond structure with an angle of 76° ± 2° and one has a rhombic structure with an angle of 66° + 2°. The former fits well to the atomic structure of the Rh layer of the RhSi(110) plane and the latter fits well to the structure of the Si(012) plane.
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