Growth of TiO2–CdO coated films: A brief study for optoelectronic applications

Abstract

Current work reports the deposition of pure and TiO2 doped CdO printed films on glass substrate via cost-effective screen-printing method and then sintered at 550 °C for 10 min. The pure TiO2, CdO and TiO2–CdO coated films were used to investigate the structural, morphological and opto-electrical properties by different analytical techniques. X-ray diffraction pattern of polycrystalline doped analogue confirms the existence of TiO2 anatase phase and cubic phase of CdO with a maximum diffraction of (101) plane. Surface morphology is derived from scanning electron microscopy finding out porous images along with EDS results to confirm the desired composition. The spectra of UV–Vis diffused reflectance spectroscopy and photoluminescence absorbance peaks show a red shift due to change in reflectance. IR transmittance spectra recorded in 4000-400 cm−1 region exhibits the stretching modes of O–Ti–O and Cd–O groups present in these samples. The current vs. voltage (IV) characteristics and direct current conductivity measurement shows p-n junction diode behaviour. All the parameters were calculated and described in-depth, including structural, optical and electrical properties. The obtained results suggest that TiO2–CdO thick film could be used in optoelectronic applications due to the shift in optical radiation absorption to visible region, reduction in recombination rate of charge carriers and increase in electrical conductivity.