Abstract
Growth of titanium dioxide (TiO 2) thin films on Si(100) substrates was carried out using a single molecular precursor at deposition temperature in the range of 300–700°C by the metal organic chemical vapor deposition (MOCVD) method. Titanium(IV) isopropoxide, (Ti[OCH(CH 3) 2] 4), was used as a precursor without any carrier gas. Crack-free, anatase type TiO 2 polycrystalline thin films with a stoichiometric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 500°C. XRD and TED data showed the formation of the highly oriented anatase phase with the [211] direction for the TiO 2 thin films grown on Si(100) at below 500°C, whereas with increasing the deposition temperature to 700°C, the main film growth direction was changed to be [200], suggesting a possibility of epitaxial thin film growth. Two distinct growth behaviors were observed from the Arrhenius plots. Below 500°C, the growth rate of TiO 2 is apparently limited the substrate temperature. The activation energy for TiO 2 film deposition calculated in this region is approximately 77.9 kJ/mol, while that for a film grown above 500°C shows a negative value, indicating a predominant diffusion controlled deposition process. Using Al/TiO 2/p-Si metal-insulator semiconductor (MIS) diode structure, a dielectric constant was also obtained from a capacitance-voltage ( C– V) curve to be 21.
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