Growth of Thin Epitaxial Silicon Layers on Heavily Doped Substrates by RTP-CVD

Abstract

ABSTRACTSilicon epitaxy plays an important role in improving the performance and reliability of semiconductor devices. The continuous scale-down in device feature size demands a low thermal budget epitaxial technique to maintain the structural integrity of processed devices. In this paper, rapid thermal processing chemical vapor deposition (RTP-CVD) has been used to deposit high quality, thin silicon epitaxial films with superior thickness control. Parameters affecting the quality and rate of epitaxial growth are discussed.