Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy

Abstract

AbstractIn this paper, we report on the growth of thick gallium nitride (GaN) layers on 4‐in. and 6‐in., (111)‐orientated silicon substrates by metalorganic vapor phase epitaxy. Up to 4 µm thick continuous GaN layers have been obtained by inserting both SiN and AlN interlayers into the structure. With dislocation densities of about 1‐2×109 cm‐2 and GaN(002) and (302) X‐ray rocking curve full widths at half maximum of 420 and 1360 arcsec for 4‐in. and 374 and 810 arcsec for 6‐in., respectively, the final continuous GaN layer exhibits excellent crystalline properties (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)