Abstract
100 mum thick films of CdTe were grown on semi-insulating (100) GaAs substrates by physical vapor transport (PVT) in a modified molecular beam epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photoluminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistivity of the layers with 108 Omegacm.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
