Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure

Abstract

Preparation of AlN thin film has been examined by halide chemical vapor deposition technique using AlI 3 and NH 3 as starting materials under atmospheric pressure (AP-HCVD). The structural analysis of the deposited AlN films prepared on a Si(1 0 0) substrate by the AP-HCVD technique were carried out by the X-ray pole figure analysis. They consist of the hexagonal AlN nano-pillar crystals. It was found that the nano-pillar crystals, which have random rotation around the 〈1 0 0〉 axis, were grown at an angle of 80–90° to the substrate.