Investigations of structure and morphology of the AlN nano-pillar crystal films prepared by halide chemical vapor deposition under atmospheric pressure

Abstract

Abstract Aluminum nitride (AlN) prepared under atmospheric pressure using a halide chemical vapor deposition method has been examined by means of a variety of analytical techniques. Scanning electron microscopic observations showed that the crystals deposited onto a Si(100) substrate have hexagonal pillar structure. Based on the X-ray diffraction and X-ray pole-figure analyses, it was deduced that the each AlN pillar crystal grows with a different rotation angle around the 〈001〉 axis. Transmission electron diffraction showed that they are of single-like form. This was also confirmed by the selected area electron diffraction image as well. It was found that the diameter of pillar which constitutes an AlN film was significantly dependent upon the ratio of NH3/AlCl3 used as source materials and the growth temperature.