Abstract
We report on a technique of growing highly c-axis oriented Bi2Sr2CaCu2O8+δ (Bi-2212) thick films on MgO substrate using a combined sedimentation–deposition and liquid phase sintering and annealing process. The temperature profiles employed partial melting followed by rapid cooling to temperature below the melting point. Scanning electron micrographs show that the films have a smooth surface. No evidence of grain boundaries on the film’s surface can be seen. The critical temperatures of the samples range from ∼67K to ∼81K. This method presents a quick and easy preparation for high quality epitaxial Bi-2212 films.
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