Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth

Abstract

Stress-reduced GaAs layers were grown on Si substrates with the epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to the Si substrate using SeS 2 and another GaAs layer was regrown. The crystal quality is very much improved compared with the conventional heteroepitaxial GaAs-on-Si grown by using two-step growth method. The full-width at half-maximum is as small as 54 arcsec and the slope of the time-resolved photoluminescence decay line corresponding to the minority carrier lifetime is 1.86 ns. The stress involved in GaAs layer is almost zero after the regrowth. The combination of epitaxial lift-off and the regrowth technique is a method to obtain a stress-reduced high-quality GaAs layer on the Si substrate.