Abstract
AbstractSingle crystalline tin oxide (SnO2) thin films, as a candidate for next generation novel and multifunctional transparent devices, have been grown by the mist chemical vapour deposition (CVD) method. Using water solution of tin dichloride as a source precursor, which was ultrasonically atomized to form mist particles being transferred to the reaction area by a carrier gas, the mist CVD allows safe and costâeffective growth of highâquality single crystalline films on sapphire substrates. The carrier concentration and mobility were 1.9Ă1017 cmâ3 and 55 cm2/Vs, respectively, which were comparable to those of SnO2 films grown by molecular beam epitaxy. Growth of safe materials such as oxides by environmentalâfriendly technology, as we demonstrated in this paper, is one of the targets to which future compound semiconductor technology should be directed. (© 2011 WILEYâVCH Verlag GmbH & Co. KGaA, Weinheim)
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