Abstract
A new growth system, which allows in situ monitoring of the crystal-solution interface, was developed and applied to grow SixGe1-x (x\\fallingdotseq0.15) bulk crystal with uniform composition by the multicomponent zone-melting method. By utilizing the system, the dynamical change of the growth rate was evaluated from the nonlinear upward shift of the interface as a function of the growth time. Based on the monitoring, an attempt was made to balance the pulling rate of the ampoule with the growth rate of the crystal, which led to the suppression of the upward shift of the growth interface. Consequently, the compositional uniformity of the crystal in the growth direction was markedly improved.
Published Version
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