Abstract
Si-rich SixGe1 − x micro-single-crystals with a diameter in the range of 300 to 900 μm were grown by the micro-pulling-down method. Growth with constant diameter could be achieved without an automatic diameter control system. Due to the design of the crucible, the transport of solute and, thus, the effective distribution coefficient keff can be reproducibly controlled by a variation of the crystal diameter or growth rate. An adjustment to keff = 1 allows the growth of crystals with constant axial composition, whereas crystals of a desired axial composition profile can be grown by appropriate variation of the controlling parameters.
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