Abstract
We attempted the vapor–liquid–solid (VLS) growth of SiC film in Si-Li solution using gaseous CH4 as a carbon source at 900 oC. A 100-m-thick liquid-phase epitaxy (LPE) layer was obtained on a 4H-SiC (0001) substrate under CH4 pressure of 0.9 MPa. X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HR-TEM) measurement showed that the LPE layer was single-phase 2H-SiC. We concluded that VLS growth in Si-Li solution using gaseous CH4 as a carbon source is useful for growing single-phase 2H-SiC.
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