Abstract
Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF 2/Si was suppressed by RTA process for planarization of facets on CaF 2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F 2/CaF 2, was also effective, where single domain GaAs layers were obtained without the RTA process.
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