Abstract
Single crystals of hexagonal boron nitride were prepared with Si flux. A mixture of Si and B powders was heated above 1850°C in a crucible made of hexagonal boron nitride under a N 2 atmosphere for 2 h. The largest crystals were about 2 mm in plane dimension and 20 μm in thickness. The large plane of the crystals was perpendicular to the c-axis.
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