Abstract
Cobalt-silicon solutions contained in graphite crucibles, in the compositional range 0 to 78 percent cobalt, have been examined qualitatively as solvents for the growth of large beta silicon carbide crystals at 1600°C. Beta silicon carbide was recovered from quenched alloys with a maximum recovery in the 37 percent cobalt region. Growth was obtained on both beta and alpha silicon carbide seeds immersed in the melt at growth temperatures from 1600°C to 2200°C.
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