Growth of SiC single crystals on patterned seeds by a sublimation method

Abstract

Growth of 6H–SiC on patterned seeds with the vertical sidewalls composed of {11–20} and {1–100} faces by a sublimation method at 1700–2000°C was studied. Anisotropy in lateral growth rates was observed, i.e the growth rate towards <11–20> was faster than that along <1–100>. It was found that free lateral growth on mesas was accompanied by a sharp decrease in the density of threading dislocation. The dependence of lateral growth rate on growth conditions such as reactor pressure and growth temperature was investigated. The factors governing the process of lateral growth of 6H–SiC on patterned seeds were discussed.