Abstract
We have demonstrated the crystal growth of Si1−x−ySnxCy ternary alloy layers on Si(001) substrates by radio-frequency magnetron sputtering. We have investigated the crystalline properties of the ternary alloy layers and clarified the influence of Sn and C on the crystalline structure of Si1−x−ySnxCy layers. We found that the epitaxial growth temperature of Si1−x−ySnxCy decreased and the island growth was suppressed by the introduction of Sn. The Sn precipitation was also effectively suppressed by C introduction. The substitutional C content of Si1−x−ySnxCy was estimated to be 2.7% and exceeded the thermal equilibrium solid solubility of C into the Si matrix.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
