Abstract
We have investigated the crystalline and optical properties of epitaxial layers of the ternary alloy Ge1−x−ySnxCy grown on a Si substrate. We achieved the formation of epitaxial Ge1−x−ySnxCy layers with a C content as high as 2% even with a high C incorporation efficiency. X-ray photoemission spectra and Raman scattering spectroscopy measurements revealed that C atoms preferentially bond with Sn atoms in the Ge matrix, which is considered to enhance C introduction into substitutional sites in Ge with local strain compensation. We also demonstrated the control of the energy bandgaps of epitaxial Ge1−x−ySnxCy layers by controlling Sn and C contents.
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