Abstract
AbstractGaAs crystals having dislocation densities of 1–2 103 cm−2 were grown using VGF technique. In the grown crystals SiGa is the dominant donor and CAs the dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproducibly.
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