Growth of quantum wire structures by selective area chemical beam epitaxy

Abstract

Selective area growth on silicon dioxide masked gallium arsenide substrates by chemical beam epitaxy is used to fabricate inverted V-shaped mesas. Indium gallium arsenide quantum wells grown on top of these mesas form quantum wire structures. The faceted mesa sidewalls are described as a function of substrate temperature and V III ratio in terms of a simple geometric model. The photoluminescence spectra show that the wire structure peak is shifted to longer wavelength compared to unpatterned substrates, for all growth temperatures. This shift is explained by the migration of indium. For low temperature growth, a second peak due to sidewall quantum wells is observed.