Growth of planar silicon whiskers via temperature gradient driven melt droplet migration

Abstract

Based on studies of the thermal migration of metal-silicon melt droplets over the surface of a silicon wafer in a longitudinal temperature gradient, we have proposed an approach for growing planar Si whiskers (directed in the plane of their substrate). Using this approach, we have produced planar Si whiskers with an aspect (length to radius) ratio in the range 4–10.