Role of Longitudinal Temperature Gradients in Eliminating Interleaving Inclusions in Casting of Monocrystalline Silicon Ingots

Abstract

Infrared analysis reveals the presence of interwoven inclusions, primarily comprised of silicon nitride and silicon carbide, in the casting process of monocrystalline silicon ingots. This study investigates how the longitudinal temperature gradient affects the removal of inclusions during the casting of monocrystalline silicon ingots through simulations and comparative experiments. Two monocrystalline silicon ingots were cast, each using different longitudinal temperature gradients: one employing smaller gradients and the other conventional gradients. CGSim (Version Basic CGSim 23.1) simulation software was utilized to analyze the melt flow and temperature distribution during the growth process of quasi–monocrystalline silicon ingots. The findings indicate that smaller longitudinal temperature gradients lead to a more robust upward flow of molten silicon at the solid–liquid interface, effectively carrying impurities away from this interface and preventing their inclusion formation. Analysis of experimental photoluminescence and IR results reveals that although inclusions may not be observed, impurities persist but are gradually displaced to the top of the silicon melt through a stable growth process.