Abstract
We have succeeded to grow high quality phosphorus doped n-type diamond thin films on {111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV), the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as 660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research are mentioned mainly focused on the growth of high mobility n-type diamond and its electrical properties. High quality diamond growth has been carried out by surface pre-treatment of diamond substrate. The Hall measurements performed in a wide temperature range gives detailed information about the n-type conductivity nature.
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