Abstract
ABSTRACTn-Type doping of diamond is one of the most important issues for electronic application of diamond. Phosphorus is the best candidate as an n-type dopant at this moment. We have succeeded to grow high quality phosphorus doped diamond thin films on {111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV), the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as 660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research are mentioned mainly focused on the growth of high mobility n-type diamond and its electrical properties. The Hall measurements performed in a wide temperature range gives detailed information about the n-type conductivity nature of phosphorus doped diamond.
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