Abstract
Molecular beam epitaxy has been used to grow Li-doped ZnSe on (100)GaAs substrates, resulting in material which exhibits a low-temperature photoluminescence spectrum dominated by emission from acceptor-bound excitons, with no evidence of emission from residual donors. Electrical measurements on these films indicate that, while the resistivity of the material is high, the majority carriers are holes. This is the first report of p-type conversion in ZnSe grown by molecular beam epitaxy.
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