Abstract
We report for the first time the deposition of NiS films on etched Si(111) and (012) using pulsed laser ablation. NiS films in the hexagonal(β)phase were formed at a S:Ni target composition of 2:1 and at a substrate temperature of 350°C. Films were obtained on Si(111) and Al2O3(012) substrates. The films on Al2O3(012) exhibited c-axis orientation over a wide range of substrate temperatures.
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