Abstract
The formation of transition metal chalcogenide (NbS 2, MoS 2 and NbSe 2) thin films was performed by pulsed excimer laser ablation for the first time. Al 2O 3(012) was used as a substrate. NbS 2 thin films were obtained using a target with a S/Nb composition ratio of 4.0 and at substrate temperatures as high as 600°C. The films exhibited c-axis orientation. The growth conditions of NbS 2 films are well explained by the substrate temperature-target composition diagram. NbS 2 thin films of high crystallinity can be obtained by controlling the target composition with the S/Nb ratio and the substrate temperature. The growth conditions of NbSe 2 and MoS 2 thin films are quite similar to those of NbS 2 films.
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