Abstract
Bulk crystals of BN, AlN and GaN were grown by means of Na flux. All these crystals were grown at a temperature of 800°C and a nitrogen pressure of 100 atm, relatively lower than that required by many flux and melt growth methods. High-quality GaN single crystals as large as 0.5 mm were obtained. Furthermore, the oriented GaN crystals were obtained by means of the seeded Na flux method with the addition of oriented AlN (0001) film in the growth ambient. The nucleation of bulk GaN was spatially confined on top of the AlN film and grown with the GaN [0001] axis parallel to the AlN [0001] axis. In addition, the h-BN polycrystals were confirmed by the h-BN (0002) peak of X-ray diffraction (XRD) at 2θ=26.700. A hexagonal grain with a size as large as 2 μm was observed by scanning electron microscopy (SEM). Likewise, AlN crystals were also obtained from Al wires.
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